Chinese Optics Letters, Volume. 9, Issue 4, 041405(2011)

Passively mode-locked grown-together composite YVO4/Nd:YVO4 crystal laser with a semiconductor saturable absorber mirror under 880-nm direct pumping

Fangqin Li1,2,3, Nan Zong1, Zhichao Wang1,3, Lin Han1, Yong Bo1, Qinjun Peng1, Dafu Cui1, and Zuyan Xu1
Author Affiliations
  • 1Research Center of Laser Physics and Technology, Key Laboratory of Functional Crystal and Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
  • 2Key Laboratory of Optical Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
  • 3Graduate University of the Chinese Academy of Sciences, Beijing 100049, China
  • show less

    A passively mode-locked grown-together composite YVO4/Nd:YVO4 crystal laser is demonstrated with a semiconductor saturable absorber mirror by 880-nm laser-diode direct pumping. Under the absorbed pump power of 24.9 W, a maximum output power of 10.5 W at the repetition rate of 77 MHz is obtained, corresponding to the optical-optical conversion efficiency of 42.1% and the slope efficiency of 53.4%. The pulse width measured is 33 ps at the output power of 10 W.

    Tools

    Get Citation

    Copy Citation Text

    Fangqin Li, Nan Zong, Zhichao Wang, Lin Han, Yong Bo, Qinjun Peng, Dafu Cui, Zuyan Xu, "Passively mode-locked grown-together composite YVO4/Nd:YVO4 crystal laser with a semiconductor saturable absorber mirror under 880-nm direct pumping," Chin. Opt. Lett. 9, 041405 (2011)

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category: Lasers and Laser Optics

    Received: Oct. 22, 2010

    Accepted: Dec. 14, 2010

    Published Online: Mar. 18, 2011

    The Author Email:

    DOI:10.3788/COL201109.041405

    Topics