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Chinese Journal of Lasers, Volume. 13, Issue 7, 401(1986)

Light-activated GaAs/GaAlAs heterostructure negative resistance lasers

Zhang Quansheng, Wu Ronghan, and Li Zhaoyin
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    A light-activated GaAs/GaAlAs heterostructure negative resistance laser has been made by horizontal liquid-phase epitaxial growth. The operation principle and some of the characteristics of the device are described.

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    Zhang Quansheng, Wu Ronghan, Li Zhaoyin. Light-activated GaAs/GaAlAs heterostructure negative resistance lasers[J]. Chinese Journal of Lasers, 1986, 13(7): 401

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    Paper Information

    Category: laser devices and laser physics

    Received: May. 9, 1985

    Accepted: --

    Published Online: Aug. 2, 2012

    The Author Email:

    DOI:

    CSTR:32186.14.

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology