In this paper, the spectrum characteristics of gain and refractive index change of the TE and TM modes of single quantum well versus well width and strain are comparatively analyzed. The influences of the above factors on balancing gain and refractive index change are further investigated by introducing overlap region area of 3dB spectrum width, and the physical mechanisms are dissected. Further considering the optical confinement factor of the waveguide and the non-uniformity of the carrier concentration distribution in the multiple quantum well, a multi-parameter matching method is proposed, based on which a low-polarization quantum well material that can balance the gain spectrum and the refractive index change spectrum in the C-band (1530~1565 nm) is designed. Finally, the effect of carrier concentration is analyzed and the appropriate carrier concentration is selected. When the carrier concentration is 3. 22×1024m-3, the overlap region area of 3dB spectrum width of the two spectra of the TE and TM mode are 84. 81 nm/cm and 74. 50 nm/cm, respectively, and the gain polarization dependence and refractive index polarization dependence are maintained at within 4% and 6%. The results of this paper will help the optimal design of related devices in the all-optical network in the future.