Chinese Optics Letters, Volume. 11, Issue 9, 091204(2013)
Feasibility analysis of junction temperature measurement for GaN-based high-power white LEDs by the peak-shift method
Transient thermal impedance of GaN-based high-power white light emitting diodes (LEDs) is created using a thermal transient tester. An electro-thermal simulation shows that LED junction temperature (JT) rises to a very low degree under low duty cycle pulsed current. At the same JT, emission peaks are equivalent at pulsed and continuous currents. Moreover, the difference in peak wavelength when a LED is driven by pulsed and continuous currents initially decreases then increases with increasing pulse width. Thus, selecting an appropriate pulse width decreases errors in JT measurement.
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Jingjing Zhang, Tao Zhang, Shishen Liu, Shidong Yuan, Yafang Jin, Sheng Yang, "Feasibility analysis of junction temperature measurement for GaN-based high-power white LEDs by the peak-shift method," Chin. Opt. Lett. 11, 091204 (2013)
Category: Instrumentation, measurement, and metrology
Received: May. 21, 2013
Accepted: Jul. 1, 2013
Published Online: Sep. 3, 2013
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