In this paper, the R-cut sapphire single crystal substrates were selected, and the CeO2 buffer layers were grown on the surfaces of substrates by RF magnetron sputtering method, then the high quality Tl-1223 superconducting films were grown by the rapid heating-up sintering technology. The effects of buffer layer growth and post annealing conditions of the precursor films on the crystallization and superconducting properties of the superconducting thin films were studied. AFM and XRD measurements show that the surface of sapphire substrates have a step structure with smooth platform and the crystal quality of sapphire substrates have been improved after annealing; the CeO2 buffer layers and the Tl-1223 superconducting films all have good c-axis growth orientation under appropriate parameters, and they exist a good ab-plane texture. SEM measurements show that the well grown Tl-1223 superconducting films have a layered structure and their surfaces are dense and smooth. The Tc of the prepared superconducting film is measured to be about 111 K, and Jc (77 K, 0 T) is measured to be about 1.3 MA/cm2 in liquid nitrogen environment.