A 64 × 64 silicon-based linear-mode avalanche photodiode (APD) module was designed and fabricated for three-dimensional (3D) laser imaging. The silicon-based APD focal plane array, with a back-illuminated N⁺-p–π-P⁺ structure and 150-μm pixel pitch, operates in the linear avalanche mode. The APD pixels use an on-chip microlens, a reflecting mirror, and a composite antireflective coating to improve the photon detection sensitivity in the NIR range. The constituent readout integrated circuit integrates a high-speed fronted amplifier, a time discrimination circuit, high-accuracy TDCs, a timing control module, and other functions on a single chip. The 64 × 64 silicon-based linear mode APD arrays can simultaneously detect laser pulses with good uniformity. Test results show that the threshold optical power detected at 905 nm is 20 nW; in addition, the time resolution, time range, and maximum frame rate are approximately 0.339 ns, 16 bits, and 5 kHz, respectively. This component meets the detection requirements for high-precision, high-speed, long-distance, non-scanning laser 3D imaging.