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Chinese Journal of Lasers, Volume. 18, Issue 6, 479(1991)

Optogalvanic effect of neon with RF dischargie and its application in the measurement of high lying states

[in Chinese]1, [in Chinese]2, and [in Chinese]2
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    [in Chinese], [in Chinese], [in Chinese]. Optogalvanic effect of neon with RF dischargie and its application in the measurement of high lying states[J]. Chinese Journal of Lasers, 1991, 18(6): 479

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    Paper Information

    Category: Laser physics

    Received: Mar. 16, 1989

    Accepted: --

    Published Online: Nov. 12, 2007

    The Author Email:

    DOI:

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology