Based on original ideaabout monolithic integration of the SLD (superluminescent diode) with SOA (semiconductoroptical amplifier), the axis of current injection region was tilted by 6° with respect tothe output facet normal, by this means, 1.5 μm InGaAsP/InP integrated superluminescent light source with tiltedstructure has been fabricated. High superluminescent power of 38 mW was obtained at lowerpumping level by co-operation of the two sections. The spectral full width at half maximum(FWHM) is 16 nm, and the FWHM far field pattern (FFP) parallel and perpendicular to thejunction plane are 15° and 64°, respectively. A new phenomenon was discovered, in whichthe lasing action was suppressed by pumping the SLD section of the integrated deviceproperly.