Chinese Journal of Lasers, Volume. 10, Issue 1, 28(1983)
Enhanced absorption of CO2 laser by silicon
The changes of transmissitivy and refletivity of ion-implanted Si with time under intense CW CO2 laser irradiation have been measured. It is discovered that there is enhanced absorption of intense CO2 laser by silicon. This phenomenon may be explained qualitatively by means of free carrier absorption.
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Li Yuanheng, Li Chunjin. Enhanced absorption of CO2 laser by silicon[J]. Chinese Journal of Lasers, 1983, 10(1): 28
Paper Information
Category: laser devices and laser physics
Received: Apr. 7, 1982
Accepted: --
Published Online: Aug. 31, 2012
The Author Email:
CSTR:32186.14.
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