As the quality of CdZnTe substrate for high performance HgCdTe infrared detectors continues to improve, the development of high quality CdZnTe substrate materials is imperative. The substrate high temperature heat treatment process with vacuum high temperature heat treatment temperature field and source control is used to systematically study the influence of the main heat treatment parameters on the Zn component in CdZnTe substrates. An empirical formula for controlling the Zn component in heat treatment is given to preliminarily obtain the compositional control of the Zn component in the CdZnTe substrate and the method of high-component uniformity distribution, which improves the quality of the CdZnTe substrate.