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Chinese Journal of Lasers, Volume. 17, Issue 11, 690(1990)

A new dielectric facet protector and AR film for semiconductor light-emitting devices

[in Chinese]1 and [in Chinese]2
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  • 1[in Chinese]
  • 2[in Chinese]
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    Experimental results are presented for the first time for sputtered AIN film which is a protector and AR film on the facet of semiconductor light-emitting devices. The technical conditions for obtaing sputtered AIN film and its properties are given.

    Keywords
    light emitting devicenew protective film on facetAIN
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    [in Chinese], [in Chinese]. A new dielectric facet protector and AR film for semiconductor light-emitting devices[J]. Chinese Journal of Lasers, 1990, 17(11): 690

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    Paper Information

    Category: Laser physics

    Received: Dec. 2, 1988

    Accepted: --

    Published Online: Nov. 12, 2007

    The Author Email:

    DOI:

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology