Reducing the pixel pitch is a crucial approach to enhancing the performance of infrared detectors, and the reduction of pixel size plays an important role in infrared detectors to improve the resolution, reduce the cost of manufacturing and the heat generation, and lower the power consumption. However, the electrode, which serves as a vital link between the HgCdTe chip and the external readout circuit, poses challenges during preparation for small-pitch infrared detectors, often leading to stripping difficulties and inadequate electrode coverage. In this paper, the effects of angle, temperature and other conditions on the growth of the electrode are analyzed, and the results show that elevating the deposition temperature makes the deposited metal film layer with HgCdTe adhesion become better, and higher the deposition temperature, the better the sidewall coverage. The closer the deposition angle is to 45°, the thinner the sidewall is, and the thinner sidewall electrode can make the stripping process less difficult, and reduce the chance of contact with the electrode sidewall falling off in the hole. At the same time, the deposition angle is also an important parameter to control the roughness of the grown film, and changing the deposition angle yields a metal film layer with lower roughness. Under the condition of deposition temperature of T₀ + 40 ℃ and deposition angle of 45°, the in-hole electrode structure with easy peeling, low roughness and good adhesion is successfully prepared, which improves the performance of HgCdTe infrared devices.