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Chinese Journal of Lasers, Volume. 8, Issue 11, 49(1981)

Optimum alloying condition in ohmic contact

Xie Jingshan
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    The optimum alloying condition in ohmic contact of GaAlAs/GaAs and InGaAsP/InP semiconductor lasers is described in detail, and theoretical analysis on the point of view of metallization is given.

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    Xie Jingshan. Optimum alloying condition in ohmic contact[J]. Chinese Journal of Lasers, 1981, 8(11): 49

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    Paper Information

    Category: laser devices and laser physics

    Received: Jan. 12, 1981

    Accepted: --

    Published Online: Aug. 17, 2012

    The Author Email:

    DOI:

    CSTR:32186.14.

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology