Chinese Journal of Lasers, Volume. 46, Issue 5, 0506002(2019)
Optimal Design of Cross-Phase Modulation Points for Semiconductor Optical Amplifier
In this study, we proposed an experimental scheme for measuring the nonlinear phase shift generated by cross-phase modulation using a Fizeau interferometer. Subsequently, a formula was comprehensively obtained for evaluating the phase shift under different probe light powers, control light powers, and bias currents. The results denote that the nonlinear phase shift exhibits a monotonically increasing relation with the control light power and the bias current, and in contrast it exhibits a monotonically decreasing relation with the probe light power. Thereby, the operating points of cross-phase modulation for the semiconductor optical amplifier were optimized. Further, we proposed a method for determining the optimal phase modulation points that affect the nonlinear phase shift, and the optimal phase modulation parameters for a phase shift of π/2 were obtained. The probe light power is 0.29 mW, the control light power is 0.5 mW, and the bias current is 276 mA.
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Xin Li, Jian Wang, Xiangjing Chen, Chongqing Wu. Optimal Design of Cross-Phase Modulation Points for Semiconductor Optical Amplifier[J]. Chinese Journal of Lasers, 2019, 46(5): 0506002
Category: fiber optics and optical communications
Received: Dec. 12, 2018
Accepted: Feb. 15, 2019
Published Online: Nov. 11, 2019
The Author Email: Wu Chongqing (cqwu@bjtu.edu.cn)