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Chinese Journal of Lasers, Volume. 29, Issue s1, 155(2002)

Current Modulation Characteristics of a High Power Semiconductor Laser

YU Jian-hua1,2, HAN Shu-rong1,2, LAI Yin-juan3, LI Rui-ning3, and HUANG Guo-biao2
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  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    In this paper, the current modulation characteristics of a high power GaAs/GaAlAs quantum well laser in low frequencies (100 Hz～20 kHz) were experimentally investigated. The laser characteristics, such as the laser power, the open delay time, the threshold current, the positive duty cycle, in dependent on the modulation frequency and the modulation current were measured.

    Keywords
    laser modulationlow frequency modulationquantum-well laser
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    YU Jian-hua, HAN Shu-rong, LAI Yin-juan, LI Rui-ning, HUANG Guo-biao. Current Modulation Characteristics of a High Power Semiconductor Laser[J]. Chinese Journal of Lasers, 2002, 29(s1): 155

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    Paper Information

    Category: laser devices and laser physics

    Received: --

    Accepted: --

    Published Online: Feb. 23, 2013

    The Author Email:

    DOI:

    CSTR:32186.14.

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology