Through electro-static discharge (ESD) strike, we investigate the electro-static discharge failure phenomenon and study the failure evolution process of a vertical structure GaN-based light emitting diode (LED) thin film chip integrated with Ag mirrors through electro-static discharge (ESD) strike. Results show that a black spot appears inside the chip subsequent to the application of ESD strike. With the increase of ESD voltage, the ESD black spot gradually develops into an electro-static hole. Based on the focused ion beam etching, the cause of ESD black spot is clarified as the reduction in the reflectivity of Ag mirrors occurring when the p-GaN and Ag mirrors in the LED chip are melted by the high temperature generated during the electro-static breakdown. During the electro-static failure evolution process of the LED thin film chip, the GaN coarsened hexagonal cone structure around the ESD black spot becomes smaller and denser. This is closely related to the degree of electro-static breakdown. Therefore, the high temperature generated by electro-static breakdown influences the crystal quality of surface GaN materials.