In order to solve the conflict between high trigger voltage and low holding voltage in the traditional SCRs used for high voltage BCD process, a novel latch-up immunity multi-embedded-well SCR (MEWSCR) ESD device was proposed. Compared with the traditional SCR structure, firstly, MEWSCR device inserted an auxiliary discharge device by moving N+ and P+ diffusion region of the anode and cathode. The auxiliary device induced the secondary trigger effect and increased the holding voltage. Secondly, N-type and P-type shallow wells were embedded under the P+ diffusion region of the anode and N+ diffusion region of the cathode, respectively. The embedded shallow well enhanced the SRH recombination of non-equilibrium carriers to reduce the snapback effect of SCR, which improved the holding current. Based on a 0.18 μm BCD process, TCAD software was used to simulate. The results showed that the holding voltage of the new MEWSCR device increased to 23 V, and the holding current increased to more than 1 A, which met the requirements of ESD design window.