Chinese Journal of Lasers, Volume. 35, Issue 9, 1384(2008)

Influence of Deposition Temperature on Growth Orientation of PZT/LSAT Thin Film

Zhu Jie1,2、*, Xie Kang1, Zhang Hui2, Hu Juntao2, and Zhang Pengxiang2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    Pb(Zr0.3Ti0.7)O3 (PZT) ferroelectric thin films are grown by pulsed laser deposition (PLD) on LaSrAlTaO3 (LSAT) single crystal substrates from sintered targets of Pb(Zr0.3Ti0.7)O3 and Pb1.1(Zr0.3Ti0.7)O3 (excessive 10%-Pb) with variable temperature of 550~750 ℃, respectively. The pattern observed by X-ray diffraction (XRD) indicates that the orientation of thin film growth transits from approximate c-axis at 550 ℃ to approximate a-axis at 750 ℃ gradually in the no-excessive situation. But in the lead excessive situation, the thin film growth has no obvious transition change. Surface morphology measured by atomic force microscopy (AFM) demonstrates that the root-mean-square (RMS) roughnesses are 16.9 nm and 13.7 nm respectively when the PZT films are grown of approximate c-axis and a-axis. But in the mixed growth orientation, the RMS roughness was about 68 nm due to the competition growth.

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    Zhu Jie, Xie Kang, Zhang Hui, Hu Juntao, Zhang Pengxiang. Influence of Deposition Temperature on Growth Orientation of PZT/LSAT Thin Film[J]. Chinese Journal of Lasers, 2008, 35(9): 1384

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    Paper Information

    Category: materials and thin films

    Received: Nov. 26, 2007

    Accepted: --

    Published Online: Sep. 9, 2008

    The Author Email: Jie Zhu (z5_zj@163.com)

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