Chinese Journal of Liquid Crystals and Displays, Volume. 37, Issue 1, 45(2022)

Quantitative calculation and design method for the resistance of via hole connected by ITO

ZHOU Yan, WANG Chao, CHEN Peng, ZHU Ning, JIANG Peng, and GAO Yu-jie
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    At present, there are only some qualitative design rules for via hole connected by ITO in TFT-LCD panel, and there is lack of quantitative calculation and design method of via hole. In this paper, the quantitative calculation method for the resistance of this kind of via hole is studied, and the relationship between the resistance and the breakdown current of via hole is explored, which provides guidance for us to design via hole reasonably to prevent the hole from burning. Firstly, by analyzing the structure of via hole, the equivalent resistance circuit diagram is abstracted and the decomposition formulas for the resistances of via holes with various structures are obtained. The resistance of via hole is mainly composed of the contact resistances of deep and shallow holes, and the resistance of ITO between the deep and shallow holes. Then, by designing the contact holes between metal and ITO in different sizes, Kelvin Four-terminal sensing method is used to measure the relationship between the contact resistances of deep and shallow holes and the hole sizes. Meanwhile, the resistance of ITO between the deep and shallow holes can be calculated by the square resistance and size of ITO between the deep and shallow holes. Therefore, we can calculate the resistance of via hole with various structures only according to the hole size and the square resistance of ITO. By analyzing the correlation between the measured and calculated resistance values of a large number of via holes, the linear correlation coefficient is 0.96, which proves the reliability of the calculation method. Finally, by measuring the resistance values and breakdown current values of a large number of via holes, a significant power function relationship between the resistance value and breakdown current is found, the power index is around -1.3, and the correlation coefficient is 0.98. Thus, we have established a set of guiding methods about resistance calculation and breakdown current evaluation of via hole quantitatively.

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    ZHOU Yan, WANG Chao, CHEN Peng, ZHU Ning, JIANG Peng, GAO Yu-jie. Quantitative calculation and design method for the resistance of via hole connected by ITO[J]. Chinese Journal of Liquid Crystals and Displays, 2022, 37(1): 45

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    Paper Information

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    Received: Oct. 26, 2021

    Accepted: --

    Published Online: Mar. 1, 2022

    The Author Email:

    DOI:10.37188/cjlcd.2021-0266

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