Large-scale periodic dot matrix anti-reflective microstructures were fabricated on the surface by using UV picosecond laser with rapid line scanning to improve the infrared transmittance of As₂Se₃glass. In the study, the laser ablation threshold of As₂Se₃glass was concluded and the optimal line scanning method was designed. The transmittance of the fabricated chalcogenide glass increased about 10.0 % and 5.2% in wavelength ranged from 11.0 μm~12.4 μm and 13.0 μm~14.2 μm, respectively. In addition, the wettability of the glass was not dam-aged by laser scanning. The processing was carried out in air condition showing low cost, high controllability and high efficiency. It only took 3.65 s to finish the fabrication of 8 mm×8 mm surface structures. Both the size and space of the surface microstructure unit can be controlled according to the application requirement. The removal of the chalcogenide glass induced by laser was mainly based on "cold fabrication" in which no obvious thermal effects inducing the element change on the surface were observed. Higher laser energy could induce obvious thermal effect resulting in melting of the ablation points and bump of the crater edges.