In order to improve the polishing precision of SiC ceramics effectively, a kind of polishing technology, namely infrared nanosecond and ultrafast ultraviolet picosecond laser for silicon carbide ceramics, was designed. The effects of laser power, repetition rate, scanning rate, and defocus on SiC surface quality were investigated experimentally by using infrared nanosecond laser and ultrafast ultraviolet picosecond laser double-beam polishing mothed. The results show that the surface of the laser double-beam polished silicon carbide ceramics is compared with that of the single ultraviolet picosecond polishing ceramics, the roughness of the laser double-beam polishing and single-beam polishing decreases from 2.87 μm to 0.42 μm and 0.53 μm respectively, with the laser power 24 W, the scanning speed is 200 mm/s, the laser repetition rate is 500 kHz, and the defocus is 1 mm. The SiC ceramics are densified by laser double-beam polishing, the ceramic surface is recrystallized and neat after polishing, and the average grain size of the SiC polished surface is 1.48 μm, and the surface mechanical properties are improved. The results provide the guide for precision laser polishing of ceramics and other hard and brittle materials.