Single-quantum-well GaAs/AlGaAs lasers

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Chinese Journal of Lasers, Volume. 20, Issue 6, 413(1993)

[in Chinese]¹, [in Chinese]², [in Chinese]², and [in Chinese]²

Author Affiliations

¹[in Chinese]

²[in Chinese]

show less

Abstract Get PDF(in Chinese)

Single- quantum-well GaAs/AlGaAs laser with graded- index separate confinement heterostructure (GRIN-SCH-SQW) were fabricated by molecular beam epitaxy. The laser exhibits low threshold current and single mode operation performances. 55 mW/facet CW output power has been obtained.

Keywords

GaAs/AlGaAs molecular beam epitaxy single-quantum-well

Tools

Get Citation

Copy Citation Text

[in Chinese], [in Chinese], [in Chinese], [in Chinese]. Single-quantum-well GaAs/AlGaAs lasers[J]. Chinese Journal of Lasers, 1993, 20(6): 413

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites