The white light-emitting diode (NUV-WLED) assembled by the near-ultraviolet chip and the red-green-blue phosphor can effectively alleviate the “blue light hazard” and improve the color rendering index. In this study, Ba₉Lu₂Si₆O₂₄:xEu³⁺(0≤x≤0.15) red phosphors were prepared by high-temperature solid-state method, and the phase structure, micromorphology and luminescence properties of the samples were studied by X-ray powder diffraction, scanning electron microscope and spectrometer, and the effect of Eu³⁺ doping on the luminescence properties was analyzed. Eu³⁺ was successfully doped into the Ba₉Lu₂Si₆O₂₄ matrix, and the central excitation peak of the sample was 393 nm (⁷F₀→⁵L₆), the central emission peak was 612 nm (⁵D₀→⁷F₂), and the luminous intensity was the highest when x=0.09. The white LED device was fabricated from Ba₉Lu₂Si₆O₂₄:xEu³⁺ red phosphor, and the color rendering index was close to 90 and showed stable white light emission. The Ba₉Lu₂Si₆O₂₄:xEu³⁺ red phosphor reported in this study has potential application value in white light-emitting diode illumination driven by UV LED chips.