Based on the theoretical analysis for the influence of operating temperature on the operating wavelength electro-optical conversion efficiency and lifetime of the device, the high-power 808 nm quasi-continuous wave (QCW) laser diode array was fabricated with the technology of wavelength compensating, Al-free active region epitaxial material with high characteristic temperature and integrative soldering. When the heat sink temperature was 70 ℃, a CW output power of 65 W of a single bar was achieved at a driving current of 80 A. A characteristic temperature of a single bar in the range of 20 ℃～70 ℃ was estimated to be about 145 K. Under quasi-continuous wave (2% duty factor) operation condition, the laser diode array stacked with 10 bars achieved an electro-optical conversion efficiency of 53%, and a lifetime in excess of 109 shots.