Chinese Journal of Lasers, Volume. 20, Issue 3, 161(1993)

Monolithic reactive ion etched groove-coupled-cavity AlGaAs/GaAs laser

[in Chinese]1, [in Chinese]2, [in Chinese]3, [in Chinese]3, and [in Chinese]3
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  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    Monolithic groove-coupled-cavity AlGaAs/GaAs lasers were fabricated by using the technique of reactive ion etched of laser facets. CW stable single mode operation room temperature were observed. Typical single mode (FWHM) is about 0.23 nm mode suppression, 19 dB, mode space, 2.5 nm, and two-cavity threshold current of mode operation, 52 mA.

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Monolithic reactive ion etched groove-coupled-cavity AlGaAs/GaAs laser[J]. Chinese Journal of Lasers, 1993, 20(3): 161

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    Paper Information

    Category: Laser physics

    Received: Dec. 12, 1991

    Accepted: --

    Published Online: Dec. 7, 2007

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