HgCdTe materials have the advantages of fast response, high quantum efficiency, and continuously adjustable bandgap, and are widely used in the field of infrared detection. In this paper, the recent progress of the 11th Research Institute of CETC in the preparation of HgCdTe materials is reported. In the preparation of CdZnTe substrate materials, a breakthrough has been made in the crystal growth technology of ϕ135mm CdZnTe, and the average etch pit density (EPD) of CdZnTe substrate less than 1×10⁴ cm^-2, and has the mass production capacity of 80mm×80mm CdZnTe substrate. In terms of the preparation of HgCdTe films in liquid phase epitaxy, the average etch pit density (EPD) of tellurium-rich horizontal liquid epitaxial HgCdTe films is less than 4×10⁴ cm^-2, and it has the ability to prepare 80 mm × 80 mm HgCdTe, and the mercury-rich vertical liquid phase epitaxy realizes the batch preparation of high-quality double-layer heterojunction materials, and FWHM of heterojunction materials is controlled in the range of 20~40 arcsec, and the thickness homogeneity of HgCdTe films is better than △d=±0.6 μm. In the molecular beam epitaxial HgCdTe film, the preparation of 6-inch Si-based HgCdTe material with a component standard deviation better than 0.0015 and a surface macroscopic defect density less than 100cm^-2, and the CdZnTe-based HgCdTe has a preparation capacity of 50mm×50mm, with a standard deviation of 0.002 and a thickness standard deviation of 0.047 μm. According to the verification results of the detectors, the engineering preparation of infrared focal plane detectors of 1 k×1 k, 2 k×2 k and other specifications based on the liquid phase epitaxial HgCdTe at the tellurium-rich level has been realized, the preparation of high-temperature working, long-wave and very long-wave detectors has been realized by using double-layer heterojunction materials, and the development of infrared focal plane detectors of 2.7 k × 2.7 k, 5.4 k × 5.4 k, 8 k × 8 k and other specifications has been realized by using HgCdTe films prepared by molecular beam epitaxy, which has great application potential in the aerospace field.