In order to overcome the shortcomings of stannic oxide (SnO2) film material with low conductivity and limited transmittance,SnO2 film with better photoelectric properties was obtained by doping modification.SnO2 films doped with Ti were prepared by soliquid-gelatum（sol-gel） spin coating method using anhydrous ethanol as solvent,which were 0 at%,3 at%,5 at%,7 at% and 9 at%,respectively.The structure,morphology and photoelectric properties of Ti doped SnO2 thin films were systematically analyzed by X-ray diffractometer (XRD),X-ray photoelectron spectroscopy (XPS),scanning electron microscope (SEM),atomic force microscope (AFM),ultraviolet-visible (UV-Vis) spectrophotometer and Hall effect tester.The results show that the transmittance of the samples is above 90% except for Ti doping of 9 at%.The optical band gap values first decrease and then increase with the increase of doping concentration.In addition,Ti doping reduces the resistivity of SnO2 films,and the highest figure of merit (FOM) of the samples can reach 14.45×10-3 Ω-1 when the Ti doping amount is 3 at%.