Journal of Synthetic Crystals, Volume. 52, Issue 1, 139(2023)

Photoelectric Properties of Bi2S3/MIL-125(Ti) Composites with n-n Heterostructure

LAN Boyang1、*, QI Wanxin1, LI Dong1,2, and HAN Fenglan1,2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    Using sodium thiosulfate pentahydrate (Na2S2O3·5H2O), bismuth nitrate pentahydrate (BiN3O9·5H2O) as sulfur source and bismuth source, and urea (CON2H4) as structure guide agent, bismuth sulfide (Bi2S3) with nanorod structure was prepared. It was grown in situ on the cage-like surface of MIL-125(Ti). PEC performance test shows that in 0.5 mol·L-1 sodium sulfate electrolyte (pH=6.0), Bi2S3/MIL-125(Ti)0.07(the addition amount of MIL-125(Ti) is 0.07 g) composite has the highest photoelectric property. The significant enhancement of photoelectric property mainly depends on the bandgap reforming effect of Bi2S3/MIL-125 composite, which significantly improves the absorption capacity of ultraviolet light and visible light. However, due to the slow electron transfer between Bi2S3/MIL-125 photoelectrode and electrolyte interface, in order to improve the interface charge transfer kinetic performance of Bi2S3/MIL-125 photoelectrode, Ag NPs was introduced by thermal reduction method to modify the Bi2S3/MIL-125 photoelectrode. The Ag-Bi2S3/MIL-125 photoelectrode was prepared to accelerate the electron transfer between interfaces. In the range from -0.5 V to -0.8 V (versus Ag/AgCl), maximum saturation photocurrent of Bi2S3/MIL-125(Ti)0.07 (-0.90 mA·cm-2) is about 1.5 times of unmodified Bi2S3(-0.61 mA·cm-2), and maximum saturation photocurrent of Ag-Bi2S3/MIL-125(Ti)0.07 (-1.87 mA·cm-2) is about 3.1 times of unmodified Bi2S3 (-0.61 mA·cm-2).

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    LAN Boyang, QI Wanxin, LI Dong, HAN Fenglan. Photoelectric Properties of Bi2S3/MIL-125(Ti) Composites with n-n Heterostructure[J]. Journal of Synthetic Crystals, 2023, 52(1): 139

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    Paper Information

    Category:

    Received: Sep. 26, 2022

    Accepted: --

    Published Online: Mar. 18, 2023

    The Author Email: Boyang LAN (2879551381@qq.com)

    DOI:

    CSTR:32186.14.

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