Chinese Optics Letters, Volume. 2, Issue 9, 09536(2004)

Pre-pumped passively Q-switched Nd:YAG/Cr:YAG microchip laser

Xinning Tian1, Ping Yan1、*, Qiang Liu1, Mali Gong1, and Yun Liao2
Author Affiliations
  • 1Center for Photonics and Electronics, Department of Precision Instruments, Tsinghua University, Beijing 100084
  • 2University of Electronic Science and Technology of China, Chengdu 610054
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    A pre-pumped passively Q-switched Nd:YAG/Cr:YAG microchip laser is demonstrated with a peak power of 7.5 kW at pulse repetition rate of serveral kilohertzs. The full-width at half-maximum (FWHM) is 734 ps, and the pulse energy is 5.5 μJ with a fundamental spatial mode. In this system, the pre-pumped microchip laser of Nd:YAG/Cr:YAG wafer which is bonded through the thermal-bonding technique has achieved a time jitter value of 12 μs and a Q-switched amplitude instability of 1.26% (1δ) through the pre-pumped modulation technique.

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    Xinning Tian, Ping Yan, Qiang Liu, Mali Gong, Yun Liao, "Pre-pumped passively Q-switched Nd:YAG/Cr:YAG microchip laser," Chin. Opt. Lett. 2, 09536 (2004)

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    Paper Information

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    Received: Mar. 10, 2004

    Accepted: --

    Published Online: Jun. 6, 2006

    The Author Email: Ping Yan (pyan@mail.tsinghua.edu.cn)

    DOI:

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