The 830 nm semiconductor laser（hereinafter referred to as the "power supply laser"）in electronic current transformers is an active optical device that supplies energy to remote modules. However, currently there are frequent cases of laser malfunctions, which seriously threaten the safe and stable operation of the ultra-high voltage power grid. This paper establishes a high current aging acceleration system and divides the samples into three aging test groups：2.1A, 2.3A, and 2.5A. The PIV curve scanning is conducted every 168 hours to study the degradation and attenuation characteristics of the powered laser during accelerated aging. After 2 100 hours of aging acceleration test, it is found that the attenuation rate of optical power became faster with the increase of acceleration current, and the slope efficiency changed only by about 3%, while the threshold current changed significantly by more than 10%. And it is proved that under controlled environmental temperature conditions, using the Eyring formula can better estimate the characteristic life of the powered laser, and it indicates that under a normal driving current of 0.7 A, the estimated characteristic life of the powered laser can reach 14.94 years. Furthermore, based on the analysis of the failed chips after accelerated aging, it is found that optical damage on the cavity surface is one of the main causes of their failure. Therefore, this study provides experimental data support and optimization direction guidance for predicting the health status of power supply lasers by studying the degradation law of lasers.