Chinese Journal of Lasers, Volume. 16, Issue 3, 153(1989)
Study of picosecond properties during phaie transition in silicon
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Μa Haiming, Liu Yixian, Li Fuming. Study of picosecond properties during phaie transition in silicon[J]. Chinese Journal of Lasers, 1989, 16(3): 153
Paper Information
Category: Laser physics
Received: Jul. 6, 1987
Accepted: --
Published Online: Aug. 13, 2012
The Author Email:
CSTR:32186.14.
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