Semiconductor Optoelectronics, Volume. 46, Issue 3, 444(2025)

Defect-Tolerant High-Q Mid-infrared Cavity Based on Valley Photonic Crystals

KANG Chen1, YU Jinling1,2, CHEN Can1, LAI Yunfeng2, CHENG Shuying2, CHEN Yonghai3,4, and LI Yuan3,4
Author Affiliations
  • 1School of Advanced Manufacturing, Fuzhou University, Quanzhou 362251, CHN
  • 2Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, CHN
  • 3Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, CHN
  • 4Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, CHN
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    A mid-infrared cavity is implemented herein on a valley photonic crystal structure with a honeycomb lattice via manipulation of the valley degrees of freedom. The resulting topological waveguide designed considering this structure exhibits remarkable unidirectional transmission characteristics, achieving near-unity forward transmission efficiency within the operating frequency range while effectively suppressing backward scattering. The cavity constructed on the basis of this design achieves a quality factor of 5.59×104 within the target frequency range. When compared to conventional photonic crystal cavities, this mid-infrared cavity exhibits a significantly lower inverse participation ratio that reaches as low as 1.6 and consistently remains below 2 within the target frequency range. This results in significant mode field distribution uniformity. Moreover, the mode distribution of the cavity remains stable even when structural defects are introduced.

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    KANG Chen, YU Jinling, CHEN Can, LAI Yunfeng, CHENG Shuying, CHEN Yonghai, LI Yuan. Defect-Tolerant High-Q Mid-infrared Cavity Based on Valley Photonic Crystals[J]. Semiconductor Optoelectronics, 2025, 46(3): 444

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    Paper Information

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    Received: Mar. 4, 2025

    Accepted: Sep. 18, 2025

    Published Online: Sep. 18, 2025

    The Author Email:

    DOI:10.16818/j.issn1001-5868.20250304001

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