Perovskite solar cells (PSCs) have achieved significant progress in recent years. However, to further reduce the cost and improve stability of PSCs, development of low-temperature processed, stable and efficient inorganic hole-transport layer is mandatory. In this work, inorganic CuS based PSCs were simulated with the simulation software SCAPS-1D. The effects of thickness and defect density of the absorber, defect densities of the interfaces, and electron affinity of the hole-transport layer (HTL) on the performance of PSCs were studied. Results show that when perovskite thickness is 400 nm, the defect densities of the absorber and the interfaces are both under 10-16 cm-3, and the electron affinity of CuS is 3.3 eV, the PSCs yield higher performance with open circuit voltage (Voc) of 1.07 V, current density (Jsc) of 22.72 mA/cm2, fill factor (FF) of 0.85, and photoelectric conversion efficiency (PCE) of 20.64%. This work provides theoretical guidance for the preparation of high-performance PSCs based on CuS HTLs.