Study on Performances and Mechanism of Frequency Domain Optical storage for a Highly-efficient Orgsnic Photon-gated Hole Burning Material

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Chinese Journal of Lasers, Volume. 21, Issue 8, 661(1994)

[in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]², and [in Chinese]²

Author Affiliations

¹[in Chinese]

²[in Chinese]

show less

Abstract Get PDF(in Chinese)

Performances and mechanism of frequency domain optical storage were studied on a highly-efficient organic photon-gated spectral hole burning material Zn-tetrabenzoporphyrin/crotonic acid/phenoxy resin (ZnTBP/CA/PhR) film. Extremely deep holes were burnt on the broat Q(0,0) band. Data writing, reading,erasing and longterm storage at 4.2 K were demonstrated. Photo-product was detected and laser induced donor-acceptor electron transfer was evidenced responsible for the hole formation.

Keywords

donot dcceptor electron transfer(DA-ET)frequencydomain optical storage photon-gated persistent spectral hole burning ZnTBP/CA/PhR

Tools

Get Citation

Copy Citation Text

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Study on Performances and Mechanism of Frequency Domain Optical storage for a Highly-efficient Orgsnic Photon-gated Hole Burning Material[J]. Chinese Journal of Lasers, 1994, 21(8): 661

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites

Paper Information

Category: holography and information processing

Received: Sep. 17, 1993

Accepted: --

Published Online: Aug. 17, 2007

The Author Email:

DOI:

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology