The period pattern emission in the Purcell cavity from plasmonic lattice structure is observed due to interaction between plasmon and photon. It is observed in preparing nanosilicon by pulsed laser, which is similar with the Wigner crystal structure. Manipulation of emission in the Si nanostructures is studied by the photoluminescence spectroscopy. The surface bonding and electronic localized states are characterized by several emission bands, which peak near 560, 600 and 700 nm on samples prepared in oxygen or nitrogen environment. Silicon quantum dots (QDs) is fabricated by laser irradiation in oxygen environment. The peak-shift in Raman spectra can be observed with increasing temperature on samples, which shows the decrease of phonon energy. The peak intensity in photoluminescence (PL) decreases and the emission band becomes broader at higher temperature, meanwhile the red- shift of PL peak is observed at 77 K compared with that at 279 K, which indicates that the localized states emission plays a main role on the nanosilicon activated. The electroluminescence wavelength is measured in the telecom window on silicon film coated by ytterbium.