A novel drive power for narrow pulse laser diode, which is composed of driving circuit and temperature controlling circuit, has been designed. High speed metal-oxide-semiconductor field effect transistor (MOSFET) is applied in the driving circuit as the switch to provide the laser diode with smooth pulse of high repetition rate (0～50 kHz), fast rise time (2.2～4.9 ns), narrow pulse width (4.6～12.1 ns) and high peak pulse current (0～72.2 A). According to the requirements of variety of laser diodes, different repetition rates, rise time, pulse widths and peak pulse currents can be achieved by varying the voltage, resistor, capacitor in the circuit. A precise proportional-integral differential (PID) temperature controlling module is adopted in the circuit to ensure the stability of the output power and the central wavelength of the laser diode. The drive power can be not only used as the power supply for the traditional high speed, narrow pulse width laser diode, but also an ideal drive power for the high energy, narrow width pulse laser diode.