LiNbO₃/ITO（LN/ITO） heterojunction thin films were sputter-deposited on glass and silicon substrates using magnetron sputtering technique at 200 ℃. The structure， morphology， and optoelectronic properties of the films were characterized through X-ray diffraction （XRD）， atomic force microscope （AFM）， ultraviolet-visible spectrophotometer， and variable temperature Hall effect measurements. XRD analysis reveals that the stacked sequence of LN/ITO heterojunction exhibited superior growth orientation and crystalline properties. AFM images show that the surface of the heterojunction thin film at 200 ℃ is relatively smooth with minimal protrusions. The ultraviolet-visible spectrophotometer indicates that the transmittance of the stacked heterojunction thin film in the visible light range was enhanced compared to that of the LN single-layer film， and the transmittance of the heterojunction film was further improved after annealing. The electrical properties of the LN/ITO heterojunction were investigated using a Hall effect tester. The results demonstrate that the LN/ITO heterojunction thin film is an p-type semiconductor. Compared to the LN single-layer film， the conductivity of the LN/ITO heterojunction thin film was increased by 11 orders of magnitude.