Photonics Research, Volume. 13, Issue 1, 125(2025)

High-resolution, high-speed, chromotropic color printing based on fs-laser-induced gold/graphene HSFLs

Shiru Jiang1,2, Woo-Bin Lee1,2, Stuart Aberdeen2, and Sang-Shin Lee1,2、*
Author Affiliations
  • 1Department of Electronic Engineering, Kwangwoon University, Seoul 01897, Republic of Korea
  • 2Nano Device Application Center, Kwangwoon University, Seoul 01897, Republic of Korea
  • show less

    Through achieving high-spatial-frequency laser-induced periodic surface structures (HSFLs) on a gold/graphene hybrid film, we introduce a high-speed, high-resolution, and wide-gamut chromotropic color printing technique. This method effectively addresses the trade-off between throughput and resolution in laser coloring. To realize Au HSFL, disordered lattice structures and high transmittance of amorphous Au (a-Au) thin film are used to overcome the rapid hot-electron diffusion and loss of plasmonic coherence typically observed on low-loss metal surfaces, respectively. Coupled with crystallization in Au and modulated surface plasmon polaritons by artificial “seed” pre-structure growing in a SiO2/Si substrate, HSFL emerged with a period of 100 nm on crystalline Au after single and rapid femtosecond laser scanning. This equips the proposed color printing with high-resolution and high-speed features simultaneously. In addition, the crystallization process is demonstrated to initiate change in the complex refractive index of Au, which causes wide-gamut colors. The chromotropic capability, which facilitates the background color to be tailored in color as well as into desirable shapes independently, enables three-level anti-counterfeiting based on the proposed color printing. Therefore, the proposed color printing is amenable for practical implementation in diverse applications, including security marking and data storage, ranging from nanoscale to large-scale fabrication.

    1. INTRODUCTION

    Structural colors based on optical metasurfaces have been widely used in color filters, surface holograms, and anti-counterfeiting [15]. Vivid structural colors originate from the interaction of light with optical metasurfaces at the subwavelength scale, yielding salient features including high efficiency, environmental friendliness, long-term stability, high resolution, and a non-photobleaching nature compared with traditional pigments and dyes [1,6,7]. Optical metasurfaces comprise sophisticated nanostructures in a predesigned arrangement to achieve customized optical functions, and their fabrication is an extremely delicate process. Although electron-beam lithography [8], nanoimprinting lithography [9], and focused ion-beam milling [10] have been primarily exploited to create various metasurfaces and structural colors, their unaffordable cost and time consumption, as well as multistep procedure, hinder the generation of structural colors over large areas with high throughput for fine arts, printing, and technological applications [2,4,11].

    Laser processing is another approach to obtaining structural colors because it is a cost-effective, rapid, flexible, and one-step treatment process [1118]. Currently, laser coloring predominantly is based on random nanostructures and laser-induced periodic surface structures (LIPSSs) [8,1118] produced by direct laser writing and plasmonic lithography, respectively. However, random nanostructures-enabled colors are plagued by poor resolution (typically 0.8–50 dpi), which is substantially lower compared with the case of optical metasurfaces (i.e., 100,000 dpi) [7]. The disorder of random nanostructures leads the laser spot size to determine the resolution of the created colors according to statistical parameters [11]. A small size laser spot is necessary to obtain the high resolution but is detrimental to high productivity [12,14], which causes a trade-off. The appearance of LIPSSs alleviated this trade-off because its feature size is independent of the laser spot size [11,12,19,20]. Unfortunately, the resolution of LIPSSs [21] was confined by the optical diffraction limit resulting from the invalidity of high-spatial-frequency LIPSS (HSFL) for structure colors [11,12,22]. Using femtosecond laser plasmonic lithography (FLPL) [13,20,22] can excite HSFL on some wide bandgap materials, which allows for nanostructuring far below the optical diffraction limit [13,20,22]. But HSFL is difficult to grow on low-loss metals (e.g., Au and Ag), which are the most popular materials in laser coloring with the potential for exhibiting vivid colors [12,15,18].

    A primary obstacle for generating HSFL on Au is the tenuous electron–phonon coupling relatively expediting the hot-electron diffusion effect. Subsequently, energy with periodic distributions stemming from the interference between incident fs-laser and surface fields [23,24], cannot be delivered from electrons to neighboring lattices due to rapid hot-electron diffusion. Therefore, initial periodic energy distributions are interrupted, and growing HSFL becomes impossible [25]. In addition, surface plasmon polaritons (SPPs) excited on an Au surface are prone to loss of coherence [13,26], which further affects the adoption of HSFL on Au.

    This study realized high resolution and productivity of color printing simultaneously through forming HSFL on Au by FLPL, which was attributed to the use of amorphous Au (a-Au) on a SiO2/Si substrate. Exploiting the capillarity of single-layer graphene (SLG), the chromotropic capability for the background colors of color printing was demonstrated after sandwiching SLG between a-Au and SiO2/Si to form Au/SLG HSFL. Formation of HSFL was attributable to the disordered lattice structures and high transmission of a-Au film, which enables suppressed hot-electrons diffusion and artificial “seed” pre-structures (i.e., LIPSS on a Si surface), respectively. Due to fs-laser-induced crystallization, the changed complex refractive index (n=n2+jk) of Au during the conversion from a-Au to crystalline Au (c-Au) endowed the proposed color printing with a wider gamut (approximately 55% sRGB) than general laser coloring (15%–35% sRGB), owing to the introduction of the photonic effect into the intrinsic plasmonic coloring mechanism. Finally, multi-level anti-counterfeiting along with customizable shapes with the assistance of isolation zones is demonstrated to illustrate the application potential in security marking.

    2. RESULTS AND DISCUSSION

    A. Proposed Chromotropic Color Printing Based on Au/SLG HSFL

    Figure 1(a) shows a schematic FLPL process for high-resolution and high-speed chromotropic color printing incorporating Au/SLG HSFL. FLPL was conducted on a 50-nm-thick a-Au/SLG layer supported by a SiO2/Si substrate. The a-Au was deposited via thermal evaporation with a low deposition rate of 0.02  nms1 owing to the integrity of the crystal structure of Au depending on the evaporation rate [27]. A fs-laser beam with a wavelength (λ) of 520 nm was delivered to the surface of a-Au/SLG via an objective lens with a numerical aperture (NA) of 0.25. The number of fs-laser pulses per irradiated spot (N), scanning period, and scanning speed were fixed to 1408 (corresponding to a repetition rate of 500 kHz), 1.5 μm, and 250  μms1, respectively. The scanning period alludes to the distance between two adjacent scanning traces. Considering enhanced transparency of a-Au, fs-laser pulses first induced LIPSS at the Si surface passing through a-Au/SLG and SiO2 layers, which functioned as “seed” pre-structure to guide the stable and strong coupled SPP at the Au surface. Consequently, large-area Au/SLG HSFL was generated quickly (Fig. 7, Appendix A). According to different fs-laser fluences (F), the FLPL can generate wide-gamut colors as shown in Fig. 1(b) owing to the hybrid plasmonic/photonic mechanism originating from changes in n and structural morphologies of Au/SLG HSFL. The change in n can be attributed to the crystallization in Au, which transforms a-Au into c-Au with the reorganization of lattice gains during FLPL [2830]. In addition, based on the crystallization, patterned Au exhibited corrosion resistance such that only background color (pristine a-Au/SiO2/Si) was varied from yellow to green (SiO2/Si) while preserving the printed colors after etching treatment. Moreover, the background color can be remotely altered and flexibly shaped due to the presence of SLG featuring capillarity to trap Au etchant [31], as shown in Fig. 1(a). The period of Au/SLG HSFL was identified to be 100 nm using the typical two-dimensional fast Fourier transform (2D-FFT) spectrum [Fig. 1(c)], derived from Fig. 7 (Appendix A). The height of Au/SLG HSFL is approximately 50 nm as shown in the transmission electron microscopy (TEM) images of the Au/SLG layer before [Fig. 1(d)] and after FLPL [Fig. 1(e)], respectively.

    (a) Schematic of creating Au/SLG HSFL via FLPL enabling chromotropic color printing. The violet and green arrows represent the direction of sample scanning (S) and the direction of polarization (E) of the incident fs-laser beam, respectively. (b) Scanning electron microscopy (SEM) images of Au/SLG HSFL created with different values of F (N=1408), corresponding to the red, green, and brown colors in (a). Scale bar: 200 nm. (c) 2D-FFT spectrum of the fabricated Au/SLG HSFL (F=2.37 J cm−2, N=1408). Cross-sectional TEM images of (d) pristine a-Au/SLG and (e) c-Au/SLG HSFL (F=2.37 J cm−2, N=1408, the SLG is too thin to be observed). The top layer of deposited carbon as shown in (d) and (e) serves as a protection layer during the preparation and measurement of TEM.

    Figure 1.(a) Schematic of creating Au/SLG HSFL via FLPL enabling chromotropic color printing. The violet and green arrows represent the direction of sample scanning (S) and the direction of polarization (E) of the incident fs-laser beam, respectively. (b) Scanning electron microscopy (SEM) images of Au/SLG HSFL created with different values of F (N=1408), corresponding to the red, green, and brown colors in (a). Scale bar: 200 nm. (c) 2D-FFT spectrum of the fabricated Au/SLG HSFL (F=2.37  Jcm2, N=1408). Cross-sectional TEM images of (d) pristine a-Au/SLG and (e) c-Au/SLG HSFL (F=2.37  Jcm2, N=1408, the SLG is too thin to be observed). The top layer of deposited carbon as shown in (d) and (e) serves as a protection layer during the preparation and measurement of TEM.

    B. Mechanism of fs-Laser-Induced Au HSFL

    Except for lowering the fluence threshold for forming uniform HSFL, the SLG has no significant impact on the formation of ultimate HSFL structures, as shown in Fig. 8 (Appendix B, for details). Thus, for convenience SLG is omitted from the discussion of the operation mechanism. The formation of Au HSFL was based on modulation both of hot-electron diffusion and SPP on the Au surface via disturbing the lattice arrangement of Au and growing artificial “seed” pre-structures, respectively. As shown in Figs. 2(c1), 2(d1), 9(d), and 9(g) (Appendix C), disordered lattice arrangement in a-Au was confirmed, which was supposed to ensure the periodic energy modulation can be imprinted successfully on lattices at the a-Au surface through electron–phonon coupling [23,29,32,33]. Because the coherence of SPP on Au surface is susceptible to loss [13,26], utilizing a-Au can only yield periodic structures but not consistent and stable structures (see Appendix D for details). As Si is among the materials most prone to generating LIPSS with its top surface turning metallic under laser irradiation [34], growing LIPSS on Si has been used to guide other materials’ nanostructuring [34,35]. Similarly, a SiO2/Si substrate is used to form LIPSS initially at the SiO2/Si interface, which can guide the stable and strong SPP on the Au surface.

    Operation mechanism of Au HSFL. (a) Schematic of the HSFL formation process in terms of N, depicting impacts of coupled SPP with “seed” pre-structure (relief on Si surface) and fs-laser-induced crystallization. The shaded areas in the cross-sectional schematic indicate thermal distributions. (b) Cross-sectional TEM images of the sample irradiated by fs-laser with (b1) N=0, (b2) N=88, and (b3) N=1408 (F=2.37 J cm−2). (c1)–(c3) High-resolution TEM images of the rectangular regions in (b1)–(b3), respectively. (d1)–(d3) Inverse fast Fourier transform (IFFT) images of the square regions in (c1)–(c3), respectively. The white arrows in (d3) indicate dislocations and stacking faults in the lattice structures. “⊥” and “∥” indicate the direction of excited SPP perpendicular and parallel to the polarization (E) of the used fs-laser, respectively. The top layer of deposited carbon as shown in (b) serves as a protection layer during the preparation and measurement of TEM.

    Figure 2.Operation mechanism of Au HSFL. (a) Schematic of the HSFL formation process in terms of N, depicting impacts of coupled SPP with “seed” pre-structure (relief on Si surface) and fs-laser-induced crystallization. The shaded areas in the cross-sectional schematic indicate thermal distributions. (b) Cross-sectional TEM images of the sample irradiated by fs-laser with (b1) N=0, (b2) N=88, and (b3) N=1408 (F=2.37  Jcm2). (c1)–(c3) High-resolution TEM images of the rectangular regions in (b1)–(b3), respectively. (d1)–(d3) Inverse fast Fourier transform (IFFT) images of the square regions in (c1)–(c3), respectively. The white arrows in (d3) indicate dislocations and stacking faults in the lattice structures. “⊥” and “∥” indicate the direction of excited SPP perpendicular and parallel to the polarization (E) of the used fs-laser, respectively. The top layer of deposited carbon as shown in (b) serves as a protection layer during the preparation and measurement of TEM.

    Specifically, the formation of Au HSFL can be summarized in three steps as illustrated in Fig. 2, dominated by a-Au, intermediate state Au (Inter-Au), and c-Au classified by the orderliness of the Au lattice with respect to N (see Fig. 9, Appendix C, for details). (1) Several fs-laser pulses were focused on a-Au; however, most were absorbed by the Si substrate [Fig. 11(a), Appendix E] after passing through the a-Au layer, owing to its negligibly small imaginary part of the dielectric constant (ε), as presented in Table 1 (Appendix E). Consequently, the SPP at the SiO2/Si interface (SPPSiO2/Si-) was excited [34,35] with a parallel orientation to the polarization (i.e., E) of the applied fs-laser beam, as displayed in Fig. 2(a1). Figure 12(a) (Appendix E) shows that the direction of the SPP at the air/a-Au interface (SPPair/a-Au-) was perpendicular to E with a single void hemisphere as the surface defect, attributed to the non-metallic properties of a-Au [36] (real part of the dielectric constant, ε>0). (2) With additional fs-laser pulses (N6), a-Au was converted to Inter-Au with a better arrangement of lattice structures owing to fs-laser-induced crystallization, as shown in Figs. 2(c2) and 2(d2). The self-organized reliefs as “seed” pre-structure on the Si surface were generated following the energy modulation of SPPSiO2/Si- [Figs. 2(a2) and 2(b2)], whose period and depth were 320 and 15 nm, respectively. Therefore, the thickness of the SiO2 layer increased from 340 to 355 nm [Figs. 2(b1) and 2(b2)]. The generated reliefs strengthened the SPPSiO2/Si- that interacted with SPPair/a-Au- to form stable coupled SPP [SPP-, Fig. 2(a1)] at the Inter-Au surface, which is parallel to E, as shown in Fig. 12(c) (Appendix E). The coupled SPP- evolved into periodic structures that were randomly distributed in the top thin layer of Inter-Au (Fig. 13, Appendix E), considering the increased absorption of fs-laser energy by the Inter-Au layer [Fig. 11(c) and an increased ε in Table 1]. (3) As N increased further, the classical (111) lattice plane of Au [37] with a plane spacing of 0.235 nm was observed, as shown in Figs. 2(c3) and 2(d3). From the 2D-FFT image of a larger lattice structure area, another lattice distance of Au (220) [38] was identified for N=1408 (Figs. 93f and 93i). Therefore, a-Au converted into c-Au, exhibiting a larger ε (Table 1). As shown in Fig. 11(d), the pulses were mostly absorbed by the c-Au layer to excite SPPair/c-Au- with the assistance of periodic structures previously formed during the Inter-Au period (Figs. 12 and 13, Appendix E). Finally, the uniformly covered Au HSFL was established following the energy modulation by SPPair/c-Au-. Owing to optothermoplasmonic and catalytic effects of Au on SLG, Au/SLG HSFL was generated following the addition of SLG between a-Au and the SiO2/Si substrate [32].

    (a) Standard CIE-1931 chromaticity diagram, (b) optical microscope images of color squares of 15 μm×15 μm, and (c) SEM image of Au/SLG HSFL with F ranging from 0 to 3.4 J cm−2 (N=1408). (d) Optical reflection spectra of Au/SLG HSFL corresponding to (a).

    Figure 3.(a) Standard CIE-1931 chromaticity diagram, (b) optical microscope images of color squares of 15  μm×15  μm, and (c) SEM image of Au/SLG HSFL with F ranging from 0 to 3.4  Jcm2 (N=1408). (d) Optical reflection spectra of Au/SLG HSFL corresponding to (a).

    C. Wide-Gamut Plasmonic/Photonic Color Printing

    As shown in Fig. 3(a), a wide gamut (approximately 55% sRGB) can be achieved by adjusting F, which is wider than the typical value (15%–35% sRGB) of laser coloring [12]. Au/SLG HSFL formation was observed at F=1.97  Jcm2, and henceforth, evolved into homogeneous and stable structures for F=2.37  Jcm2, corresponding to the color change from yellow to red [Figs. 3(b) and 3(c)]. In the optical reflection spectra [Fig. 3(d)], a new peak was observed at λ=450  nm and the original peak at λ=580  nm red-shifted with increasing F. The decreased intensities and red shift of the two reflection peaks changed the reflected color from red to green, with boosted porosity in Au/SLG HSFL at F=3.07  Jcm2. The brown color gradually replaced the green after further increasing F. The reflection peaks continued to red shift and decrease in amplitude. This was interpreted as abundant scattering and localized surface plasmon resonance phenomena [14] with the gradual fragmentation of the Au/SLG HSFL and the formation of spherical nanoparticles [Fig. 3(c)].

    The demonstrated wide gamut is attributable to the hybrid plasmonic/optical mechanism, corresponding to changes in nanoscale structures and n of Au [14,29,39], respectively. As shown in Fig. 4(a), the measured n2 and k of a-Au before the FLPL treatment differed from the typical values of Au [40] plotted in Fig. 4(b). Two groups of n2 and k values were considered to calculate the optical reflection spectra of the a-Au/SLG and c-Au/SLG HSFL on SiO2/Si using finite-difference time-domain (FDTD) simulations [39]. The HSFLs were reconstructed from the measured SEM images (Fig. 14, Appendix F) for calculations. Prior to FLPL treatment, the simulated result using n2 and k values of a-Au matched well with the measured reflection spectrum [Fig. 4(c)]; n2 and k of typical Au enabled a better agreement for the case of the c-Au/SLG HSFL [Fig. 4(d)]. The mismatched spectra in the wavelength region of 600  nm<λ<900  nm in Fig. 4(d), may be caused by dislocations and stacking faults in the lattice structures indicated by the white arrows in Fig. 2(d3); hence, the interband and intraband transitions of Au were inhibited [7,14]. Therefore, complex refractive index, n, altered with the restoration of the crystal structure in Au due to fs-laser-induced crystallization [41]. Additionally, the plasmonic phenomenon was underpinned by the fact that the energy was confined around boundaries of c-Au nanostructures, as observed in the electric field distributions on the surface [Fig. 4(e)] and cross-section [Fig. 4(f)] of the c-Au/SLG HSFL. Finally, the hybrid plasmonic/photonic mechanism was further interpreted by analyzing the absorption features of the proposed device (see Fig. 15, Appendix F, for details).

    Complex refractive index (n2 and k) of (a) pristine a-Au measured by an ellipsometer and (b) typical Au. Simulated optical reflection spectra of (c) a-Au/SLG/SiO2/Si (F=N=0) without HSFL and (d) c-Au/SLG/SiO2/Si with HSFL (F=2.37 J cm−2, N=1408) using the refractive indices as derived from (a) and (b). Simulated total electric field distributions of (e) Au surface and (f) cross-section along x=0 of c-Au/SLG HSFL with F=2.37 J cm−2 and N=1408 in response to a plane wave with λ=550 nm (n2 and k of typical Au were used).

    Figure 4.Complex refractive index (n2 and k) of (a) pristine a-Au measured by an ellipsometer and (b) typical Au. Simulated optical reflection spectra of (c) a-Au/SLG/SiO2/Si (F=N=0) without HSFL and (d) c-Au/SLG/SiO2/Si with HSFL (F=2.37  Jcm2, N=1408) using the refractive indices as derived from (a) and (b). Simulated total electric field distributions of (e) Au surface and (f) cross-section along x=0 of c-Au/SLG HSFL with F=2.37  Jcm2 and N=1408 in response to a plane wave with λ=550  nm (n2 and k of typical Au were used).

    D. High-Speed and High-Resolution Color Printing

    The color printing built on Au/SLG HSFL featured high production speed and printing resolution simultaneously, which benefited from the insensitivity of feature size to laser beam size in HSFL. For example, the period size and exhibited colors of the two kinds of HSFL structures generated by 0.25- and 0.85-NA objective lenses were identical, as depicted in Figs. 5(b) and 5(c). Both structures facilitated the distinguishable magenta points (approximately 200 nm) under the optical microscope, corresponding to a printing resolution of 127,000 dpi [6,7]. Therefore, the 0.25-NA lens with a bigger beam size was used to print the large-area “red sunset clouds” as shown in Fig. 5(a) for a low time expenditure. Analogously, the printing speed can be further expedited with a larger focused laser beam without concerning the loss of resolution.

    (a) Large-area (2 mm×2.5 mm) color printing based on fs-laser-induced Au/SLG HSFL with a 0.25-NA objective lens. (b) Enlarged optical micrograph and SEM image of the rectangular region in (a). (c) Optical micrograph and SEM image of a single line fabricated by FLPL accompanied by a 0.85-NA objective lens.

    Figure 5.(a) Large-area (2  mm×2.5  mm) color printing based on fs-laser-induced Au/SLG HSFL with a 0.25-NA objective lens. (b) Enlarged optical micrograph and SEM image of the rectangular region in (a). (c) Optical micrograph and SEM image of a single line fabricated by FLPL accompanied by a 0.85-NA objective lens.

    E. Controllable Chromotropic Color Printing Serving as a Three-Level Anti-Counterfeiting

    Color alterations have been extensively employed in anti-counterfeiting labels, with the most distinctive feature unequivocally defining the identity of the goods [4,5]. We devised a three-tier anti-counterfeiting system built upon the customizable background color of our chromotropic color printing, alongside straightforward interrogation steps. The first level of anti-counterfeiting hinges on different reactions of background and printed colors to aqua regia. As depicted in Fig. 16 (Appendix F), the spacing between crystalline grains decreased [29] in c-Au owing to fs-laser-induced crystallization, resulting in improved corrosion resistance compared with the case of a-Au. Therefore, the integrity of HSFL and printed colors was maintained but the background color changed from yellow to green because a-Au was etched upon the aqua regia treatment for 2 min. Another contributing factor to enhanced corrosion resistance could be the improved hydrophobicity resulting from increased surface roughness with the presence of the HSFL [42]. The second anti-counterfeiting scheme leveraged the remote control of background color via the capillary trapping ability of SLG in aqua regia. As shown in Fig. 6(a), a small droplet of aqua regia can spread to other regions along the a-Au/SLG interface and effectively etch away the a-Au layer. Therefore, the pristine background color can be indirectly modified even at a location far from where the aqua regia was applied. In Fig. 17 (Appendix F), a 2-μL droplet of aqua regia was found to etch yellowish a-Au 1 cm away within 3 min, whereas the printed colors were preserved. Notably, this remote control of background color can be effectively prevented by destroying the SLG to introduce isolation zones [Fig. 6(b)]. As a consequence, the background color could be customized into desired arbitrary shapes, facilitating the third level of anti-counterfeiting. The isolation zones were prepared by fs-laser direct writing to enclose a designated region and entirely prevent aqua regia from spreading into the targeted areas. An increased number of structural defects in SLG in the isolation zones were inspected by the Raman spectra (Fig. 18, Appendix F). The surface morphologies of the Au/SLG hybrid layer in terms of FLPL and etching conditions were investigated using SEM [Figs. 6(c)–6(f)]. For the case of pristine a-Au/SLG subjected to drop-wise aqua regia treatment, a-Au was removed completely with the absence of the isolation zone [Fig. 6(c2)]. In contrast, the a-Au surface was negligibly damaged within the isolation zone [Fig. 6(c3)], implying that the isolation zone played a key role in protecting the pristine background color. Meanwhile, for the Au/SLG HSFL, the surface morphologies and exhibited colors were safely preserved under all etching conditions [Figs. 6(d)–6(f)]. It was consequently verified that the fabricated colors based on fs-laser-induced Au/SLG HSFL were immune to the etching solution.

    Schematics of remotely controlling the background color through drop-wise aqua regia treatment (a1) without and (b1) with isolation zones. Optical micrographs of “PRL,” an abbreviation of “Photonics Research Lab,” with the background color varying from (a2) yellow to (a3) green after the aqua regia treatment when isolation zones are absent. (b2) Optical micrographs of the game “Tetris” keeping yellow background after the drop-wise treatment with the isolation zones. (c) SEM images of the pristine a-Au (c1) before aqua regia etching, subject to aqua regia (c2) without and (c3) with the isolation zones. (d) SEM images of the Au/SLG HSFL (F=2.15 J cm−2, N=1408) (d1) before aqua regia etching, subject to aqua regia (d2) without and (d3) with the isolation zones. (e) SEM images of the Au/SLG HSFL (F=3.07 J cm−2, N=1408) (e1) before aqua regia etching, subject to aqua regia (e2) without and (e3) with the isolation zones. (f) SEM images of the Au/SLG HSFL (F=3.4 J cm−2, N=1408) (f1) before aqua regia etching, under the aqua regia treatment (f2) without and (f3) with the isolation zones. Scale bar: 200 nm.

    Figure 6.Schematics of remotely controlling the background color through drop-wise aqua regia treatment (a1) without and (b1) with isolation zones. Optical micrographs of “PRL,” an abbreviation of “Photonics Research Lab,” with the background color varying from (a2) yellow to (a3) green after the aqua regia treatment when isolation zones are absent. (b2) Optical micrographs of the game “Tetris” keeping yellow background after the drop-wise treatment with the isolation zones. (c) SEM images of the pristine a-Au (c1) before aqua regia etching, subject to aqua regia (c2) without and (c3) with the isolation zones. (d) SEM images of the Au/SLG HSFL (F=2.15  Jcm2, N=1408) (d1) before aqua regia etching, subject to aqua regia (d2) without and (d3) with the isolation zones. (e) SEM images of the Au/SLG HSFL (F=3.07  Jcm2, N=1408) (e1) before aqua regia etching, subject to aqua regia (e2) without and (e3) with the isolation zones. (f) SEM images of the Au/SLG HSFL (F=3.4  Jcm2, N=1408) (f1) before aqua regia etching, under the aqua regia treatment (f2) without and (f3) with the isolation zones. Scale bar: 200 nm.

    3. CONCLUSIONS

    The Au/SLG HSFL enabled via FLPL solves the trade-off between resolution and speed in the field of laser coloring, thereby achieving a wide-gamut, high-resolution, and high-speed, chromotropic color printing. Employing a-Au with disordered lattice structures and growing LIPSS on SiO2/Si substrate as artificial “seed” pre-structures ensured the formation of Au/SLG HSFL via overcoming the rapid hot-electron diffusion and unstable SPP on typical c-Au surface, respectively. The period of Au/SLG was 100 nm, thereby producing a high resolution of 127,000 dpi for the fabricated colors. Crystallization occurred during FLPL to convert a-Au into c-Au with a changed complex refractive index, which combined with the nanostructural plasmonic effect, resulted in a wide gamut of 55% sRGB. Furthermore, controllable background color and its distinct response compared to printed colors to etching solution were confirmed to work as three-level anti-counterfeiting tags, which are attributed to the capillarity of SLG and fs-laser-induced crystallization. Additionally, the proposed approach holds significance for the advancement of practical color printing, owing to its straightforward color design origins and the ease of sample manufacturing implementation.

    4. MATERIALS AND METHODS

    A. Materials and Laser Irradiation

    On the Si surface, 0.3 and 0.02  nms1 deposition rates were used to deposit 340-nm-thick SiO2 and 50-nm-thick a-Au [26] layers via standard thermal evaporation, respectively. SLG was synthesized via chemical vapor deposition and transferred onto SiO2 before depositing a-Au [43]. The thickness of the SLG was estimated to be 0.4–0.5 nm. A fs-laser beam (250 fs, Lasernics, Republic of Korea) with a wavelength of 520 nm was irradiated on the surface of a-Au via a 10× and 0.25-NA objective lens. The scanning speed and period were set to 250  μms1 and 1.5 μm, respectively, using a computer-controlled translation stage (XYCV630-C-N, Misumi, Japan). Further details regarding the fs-laser system are provided in our previous work [44].

    B. Measurement Procedure

    A field-emission scanning electron microscope (FE-SEM, Inspect F50) was used to capture all SEM images. A focused ion beam (Quanta 3D FEG) cutting method was used to prepare the TEM samples. Cross-sectional and high-resolution images of atomic structures were obtained using TEM (JEM-2100F) and analyzed using the Digital Micrograph Software (Gatan, USA) to obtain the 2D-FFT and IFFT results. The reflection spectra were captured using a spectrometer equipped with a reflection probe, which was designed to detect optical beams that were normally reflected off the samples. An ellipsometer (Ellipso Technology, Republic of Korea) was used to measure the complex refractive index of a-Au. A 100× objective lens was adopted to obtain the Raman spectra (FEX, NOST) of the SLG by focusing a 531 nm laser with a power of 0.3 mW.

    C. Numerical Simulation

    For three-dimensional FDTD (Ansys/Lumerical, Canada) simulations pertaining to the optical reflection spectra [Figs. 4(c)–4(f)], the smallest mesh sizes for Au regions and SLG were set to 0.8 and 0.1 nm, respectively. The c-Au structural morphology was directly extracted from the SEM images of the Au/SLG HSFL. It is noted that periodic boundary conditions and perfectly matched layers were applied in the horizontal direction at the top and bottom boundaries, respectively.

    For the FDTD simulations in connection with Figs. 11 and 12 (Appendix E), the mesh sizes for Au, SiO2/Si, and Si (metalized) relief regions were 3, 8, and 1 nm, respectively. A hemisphere made of “etch” material was embedded from the a-Au surface to mimic surface inhomogeneity. To emulate the actual processing conditions, a Gaussian beam exhibiting a pulse duration and wavelength of 250 fs and 520 nm, respectively, was used as the light source.

    Acknowledgment

    Acknowledgment. This work was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF), funded by the Ministry of Education, Ministry of Science, ICT, and Kwangwoon University in 2024.

    APPENDIX A: LARGE-AREA Au/SLG HSFL FABRICATED BY FLPL

    A large-area Au/SLG HSFL generated quickly by FLPL can be seen in Fig. 7.

    Large-area SEM image of Au/SLG HSFL created by FLPL (N=1408, F=2.37 J cm−2).

    Figure 7.Large-area SEM image of Au/SLG HSFL created by FLPL (N=1408, F=2.37  Jcm2).

    APPENDIX B: EFFECT OF SLG ON THE FORMATION OF Au/SLG HSFL

    As shown in Fig. 8, the fluence thresholds of the fs-laser for achieving uniformly distributed Au HSFL were 2.37 and 3.07  Jcm2 for the cases with and without SLG, respectively, owing to the plasmonic coupling between the SLG and Au layer [32]. Other features of the proposed HSFL, including the period and orderliness, remained the same.

    Impact of SLG on the formation of Au HSFL (N=1408). SEM images of (a) Au/SiO2/Si and (b) Au/SLG/SiO2/Si surfaces irradiated by fs-laser with F=2.37 J cm−2; (c) Au/SiO2/Si and (d) Au/SLG/SiO2/Si surfaces irradiated by fs-laser with F=3.07 J cm−2.

    Figure 8.Impact of SLG on the formation of Au HSFL (N=1408). SEM images of (a) Au/SiO2/Si and (b) Au/SLG/SiO2/Si surfaces irradiated by fs-laser with F=2.37  Jcm2; (c) Au/SiO2/Si and (d) Au/SLG/SiO2/Si surfaces irradiated by fs-laser with F=3.07  Jcm2.

    APPENDIX C: TRANSFORM FROM a-Au TO c-Au DUE TO fs-LASER-INDUCED CRYSTALLIZATION

    For the case of a-Au before FLPL (F=N=0), the 2D-FFT image of the pristine a-Au [Fig. 9(d)] exhibited a fuzzy annulus, corresponding to a 0.38-nm lattice spacing, which derived from the moiré effect [37]. However, for the typical lattice spacing [0.235 nm, (111)] of c-Au, no information could be distinguished, which confirmed that the used pristine Au was amorphous. When the fs-laser irradiated a-Au, crystallization occurred and manifested as the appearance and restoration of crystalline structures [29]. Figure 9(e) shows the emergence of regular lattice structures for N=88 prior to the formation of a uniform HSFL. A clearer circle of 0.38 nm lattice plane can be seen in Fig. 9(h), which may be inherited from a-Au. The (111) lattice arrangement is partially formed as indicated by the vague 0.235 nm circle; therefore, we call the Au in this state Inter-Au implying the intermediate state between the a-Au and c-Au. After increasing N to 1408, uniform HSFL covered on the Au surface and the classical lattice planes (111) and (220) of c-Au with plane spacing of 0.235 and 0.15 nm, respectively, are confirmed in Fig. 9(i). Thus, HSFL started to grow on the a-Au surface but formed a uniform structure on the c-Au finally, considering the simultaneous crystallization induced by FLPL.

    SEM images of the sample irradiated by fs-laser with (a) N=0, (b) N=88, and (c) N=1408 (F=2.37 J cm−2). (d)–(f) Cross-sectional high-resolution TEM images of the SEM images in (a)–(c), respectively. (g)–(i) 2D-FFT spectral images of (d)–(f), respectively.

    Figure 9.SEM images of the sample irradiated by fs-laser with (a) N=0, (b) N=88, and (c) N=1408 (F=2.37  Jcm2). (d)–(f) Cross-sectional high-resolution TEM images of the SEM images in (a)–(c), respectively. (g)–(i) 2D-FFT spectral images of (d)–(f), respectively.

    APPENDIX D: UNSTABLE SPP ON Au SURFACE

    To check that the periodicity and coherence of SPP on the Au surface are easily lost [26], a thick glass (i.e., SiO2) was used to replace SiO2/Si as the substrate of a-Au [Fig. 10(a)] for eliminating the effect of “seed” pre-structures on the SPP on the Au surface. This replacement of substrate resulted in the random fabricated results on the surface of the a-Au/SiO2 sample as shown in Fig. 10(b) even under the optimized FLPL conditions. Although the periodic feature of generated structures was observed in Fig. 10(c), totally random results are shown in Fig. 10(d). Thus, the occurrence and characteristics of the periodic structures are random and unpredictable in response to fs-laser irradiation on a-Au/SiO2 because the coherence of SPP on the Au surface is susceptible to loss.

    Instability of the irradiation of 520 nm fs-laser on a-Au/SiO2. (a) Schematic of the treatment of a-Au on SiO2 substrate by 520 nm fs-laser. (b) SEM image of a-Au/SiO2 surface with identical fabrication conditions, where different surface morphologies are formed. High-resolution SEM images of (c) periodic structures and (d) irregular damages corresponding to the marked region in green and yellow in (b), respectively.

    Figure 10.Instability of the irradiation of 520 nm fs-laser on a-Au/SiO2. (a) Schematic of the treatment of a-Au on SiO2 substrate by 520 nm fs-laser. (b) SEM image of a-Au/SiO2 surface with identical fabrication conditions, where different surface morphologies are formed. High-resolution SEM images of (c) periodic structures and (d) irregular damages corresponding to the marked region in green and yellow in (b), respectively.

    Real Part of the Dielectric Constant ε, Its Imaginary Part ε, and Thickness of Au in Conjunction with Si Used for FDTD Simulations

    MaterialεεThickness
    a-Aua4a0.06150 nm
    Inter-Aub0.37b1.15250 nm
    c-Auc−3.26c2.2450 nm
    Si (metalized)d−14.2d30.415 nm
    Si (normal)c23.3c6.882 μm

    Measured by the authors.

    Averaged data of a-Au and c-Au.

    From Lumerical FDTD Library.

    From Ref. [34].

    APPENDIX E: INFLUENCE OF ARTIFICIAL “SEED” PRE-STRUCTURE ON THE SPP ON Au SURFACE

    FDTD simulations were employed to reveal the distributions of optical power (Fig. 11) and total electric field (Fig. 12) in Au/SiO2/Si according to the states of Au and presence of Si reliefs. Fig. 13 shows the initial periodic structures on the Inter-Au surface in response to N.

    Distributions of the absorbed optical power in the yz-plane with a single surface inhomogeneity (hemisphere with a radius of 30 nm) corresponding to increased N for (a) a-Au/SiO2/Si without Si reliefs, (b) a-Au/SiO2/Si with Si reliefs, (c) Inter-Au/SiO2/Si with Si reliefs, and (d) c-Au/SiO2/Si with Si reliefs.

    Figure 11.Distributions of the absorbed optical power in the yz-plane with a single surface inhomogeneity (hemisphere with a radius of 30 nm) corresponding to increased N for (a) a-Au/SiO2/Si without Si reliefs, (b) a-Au/SiO2/Si with Si reliefs, (c) Inter-Au/SiO2/Si with Si reliefs, and (d) c-Au/SiO2/Si with Si reliefs.

    Total electric-field distributions in the xy-plane with a single surface inhomogeneity (hemisphere with radius of 30 nm) corresponding to an increase in N for (a) a-Au/SiO2/Si without Si reliefs (i.e., “seed” pre-structure), (b) a-Au/SiO2/Si with Si reliefs, (c) Inter-Au/SiO2/Si with Si reliefs, and (d) c-Au/SiO2/Si with Si reliefs.

    Figure 12.Total electric-field distributions in the xy-plane with a single surface inhomogeneity (hemisphere with radius of 30 nm) corresponding to an increase in N for (a) a-Au/SiO2/Si without Si reliefs (i.e., “seed” pre-structure), (b) a-Au/SiO2/Si with Si reliefs, (c) Inter-Au/SiO2/Si with Si reliefs, and (d) c-Au/SiO2/Si with Si reliefs.

    Part of SEM images of Inter-Au surface irradiated by fs-laser with (a) N=6, (b) N=11, (c) N=22, and (d) N=44 (F=2.31 J cm−2).

    Figure 13.Part of SEM images of Inter-Au surface irradiated by fs-laser with (a) N=6, (b) N=11, (c) N=22, and (d) N=44 (F=2.31  Jcm2).

    APPENDIX F: HYBRID PLASMONIC/OPTICAL MECHANISM UNDERPINNING A WIDE GAMUT AND CHROMOTROPIC ABILITY OF COLORS

    To better understand the plasmonic/optical mechanism of the proposed color printing, the optical absorption responses in terms of the FLPL and complex refractive indices of Au (Fig. 4) were investigated by FDTD simulations, which is constructed based on the measured SEM image of Au/SLG HSFL as shown in Fig. 14. Considering that entire structure (Au/SLG/SiO2/Si) is sufficiently thick, its absorption was deemed to primarily affect the reflection spectra. The absorptions of Au/SLG and Si/SiO2 were inspected using a monitor placed at the interface between SLG and SiO2, corresponding to the effects of plasmonic and optical phenomena.

    (a) SEM image of fs-laser-induced Au/SLG HSFL with F=2.37 J cm−2 and N=1408. (b) Image imported into FDTD simulations from the SEM image shown in (a). The rectangular region indicates the effective simulation area.

    Figure 14.(a) SEM image of fs-laser-induced Au/SLG HSFL with F=2.37  Jcm2 and N=1408. (b) Image imported into FDTD simulations from the SEM image shown in (a). The rectangular region indicates the effective simulation area.

    Simulations of the absorption spectra according to the FLPL and complex refractive indices of Au. (a) Schematic of the cases identifying the mechanism responsible for the spectral characteristics. The geometry of the Au/SLG HSFL layer in (a3) and (a4) is identified using the SEM images (Fig. 9). The thicknesses of Au, SLG, and SiO2 layers are 50, 0.34, and 340 nm, respectively. The absorption spectra related to the pristine surface morphologies were calculated with (b) a-Au and (c) c-Au. The absorption spectra based on fs-laser induced Au/SLG HSFL (F=2.37 J cm−2, N=1408) were calculated with (d) a-Au and (e) c-Au. The absorption spectra in (b)–(e) correspond to the schematics in (a1)–(a4), respectively.

    Figure 15.Simulations of the absorption spectra according to the FLPL and complex refractive indices of Au. (a) Schematic of the cases identifying the mechanism responsible for the spectral characteristics. The geometry of the Au/SLG HSFL layer in (a3) and (a4) is identified using the SEM images (Fig. 9). The thicknesses of Au, SLG, and SiO2 layers are 50, 0.34, and 340 nm, respectively. The absorption spectra related to the pristine surface morphologies were calculated with (b) a-Au and (c) c-Au. The absorption spectra based on fs-laser induced Au/SLG HSFL (F=2.37  Jcm2, N=1408) were calculated with (d) a-Au and (e) c-Au. The absorption spectra in (b)–(e) correspond to the schematics in (a1)–(a4), respectively.

    Schematics of (a) the recovery of crystal structures from a-Au to c-Au due to fs-laser-induced crystallization and the reflected colors for the cases of (b) pristine a-Au/SLG and (c) c-Au/SLG HSFL after immersion in an etching solution of aqua regia, where the background color related to a-Au was changed from yellow to green while the printed colors based on c-Au/HSFL were preserved due to the reinforced corrosion resistance of c-Au. The black vertical lines in a-Au and c-Au indicate the lattice structures.

    Figure 16.Schematics of (a) the recovery of crystal structures from a-Au to c-Au due to fs-laser-induced crystallization and the reflected colors for the cases of (b) pristine a-Au/SLG and (c) c-Au/SLG HSFL after immersion in an etching solution of aqua regia, where the background color related to a-Au was changed from yellow to green while the printed colors based on c-Au/HSFL were preserved due to the reinforced corrosion resistance of c-Au. The black vertical lines in a-Au and c-Au indicate the lattice structures.

    Remote control of pristine background color based on the capillarity of SLG. (a) Optical microscopic image of the Au/SLG surface of the sample 3 min after dropping 2 μL aqua regia on it. Zoomed-in images of the Au/SLG surface (b) with and (c), (d) without aqua regia covering.

    Figure 17.Remote control of pristine background color based on the capillarity of SLG. (a) Optical microscopic image of the Au/SLG surface of the sample 3 min after dropping 2 μL aqua regia on it. Zoomed-in images of the Au/SLG surface (b) with and (c), (d) without aqua regia covering.

    (a) Raman spectra of SLG in the isolation zone and preserved background area, marked P1 and P2 in (b), respectively.

    Figure 18.(a) Raman spectra of SLG in the isolation zone and preserved background area, marked P1 and P2 in (b), respectively.

    [40] J. R. Fuhr, D. R. Lide, W. L. Wiese. NIST atomic transition probability tables. CRC Handbook of Chemistry & Physics(1996).

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    Shiru Jiang, Woo-Bin Lee, Stuart Aberdeen, Sang-Shin Lee, "High-resolution, high-speed, chromotropic color printing based on fs-laser-induced gold/graphene HSFLs," Photonics Res. 13, 125 (2025)

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    Paper Information

    Category: Ultrafast Optics

    Received: May. 17, 2024

    Accepted: Oct. 22, 2024

    Published Online: Dec. 20, 2024

    The Author Email: Sang-Shin Lee (slee@kw.ac.kr)

    DOI:10.1364/PRJ.529911

    CSTR:32188.14.PRJ.529911

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