A new gate type silicon on insulator (SOI) device with a laminated embedded oxygen layer was proposed. In the anti-total ionization dose (TID) reinforcement scheme for SOI devices, the buried oxygen scheme for buried oxide (BOX), and the special S-gate scheme for STI layer were adopted. Based on Sentaurus TCAD software and Insulator Fixed Charge model, the fixed charge density was set. Base on a 0.18 μm CMOS process, the TID effect simulation of the PD SOI NMOS was proposed, and three kinds of PD SOI NMOS simulation models of strip-gate, H-gate and S-gate was established. By comparing the transfer characteristic curves, the threshold voltage drift and the transconductance degradation before and after irradiation of three devices, the anti-TID irradiation performance of the device were verified. The simulation results showed that the device with S-gate could resist kink effect, and anti-TID radiation dose of the PD SOI NMOS devices could reach 5 kGy.