A structure based on the dielectric and graphene coating is presented to control the Goos-Hnchen shift. The influence of structural parameters on the resonance angle and the Goos-Hnchen shift near the resonance angle are studied with the transfer matrix method. The numerical simulation results show that the resonance angle increases with the increase of the dielectric layer thickness, but decreases with the increase of the graphene Fermi energy. The magnitude of the Goos-Hnchen shift increases first and then decreases with the increase of the dielectric layer thickness, while decreases monotonically with the increase of the graphene Fermi energy. The influence of the dielectric layer thickness on the resonance angle is more significant, while the influence of the graphene Fermi energy on the Goos-Hnchen shift is more significant.