Among the numerous semiconductors available, HgTe colloidal quantum dots (CQDs) have the advantages of widely adjustable band gap within the infrared spectrum, low production cost, and ease of integration with silicon-based readout circuits. Consequently, photoelectric devices based on HgTe CQDs exhibit significant potential for infrared detection and large-scale focal plane array (FPA) imaging applications. This review discusses recent advancements in the synthesis of HgTe CQD materials and improvements in the electrical property of CQD solids, which have contributed to the enhancement of device performance. Additionally, it summarizes the current research on HgTe CQD device structure design and FPA infrared detection technology, and provides an outlook on future development directions.