Zn-diffused high power 650 nm AlGaInP/GaInP material with compressively strained multi-quantum-well (MQW) active layer was fabricated. The zinc diffusion was used on the material facet in a sealed quartz tube. Photoluminescence (PL) spectra shows 175 meV blue-shift in the Zn diffusion area, which is transparent for 650 nm laser emission. It can greatly reduce the light absorption at the laser facet and increase the threshold of catastrophic optical damage (COD). At last, a gain-induced semiconductor laser with 100 μm tripe width and 1mm cavity length 650 nm was fabricated, and the high power output for red semiconductor laser was realized. The maximum output power reaches up to 1.55 W at 2.28 A operation current. Threshold current and slope efficiency are 382 mA and 0.82 W/A, respectively.