The preparation procedure of (F2+)H centers in sulfur-doped NaCl was describe,and the stability of (F2+)H centers in the dark at room temperature was also measured. This Paper discusses the stabilities of S2- on F2+ centers, the defect reaction during Process, and POints out that the concentration of F3 centers must be kept as lower as possible during quenching in order to obtain high concentration of (F2+)H centers. It is Proved that the transient absorption due to F2+ centers during light aggregation can not be absolutely avoided, and thus increases the no-laser-active loss. The exposure dosage during aggregation is one of the major controllable paramaters to obtain a high qualitative crystal.