Chinese Optics Letters, Volume. 3, Issue 8, 08494(2005)

Deposition of ZnO thin films on (100) γ-LiAlO2 substrate

Jun Zou1,2, Shengming Zhou1, Xia Zhang3, Fenglian Su4, Xiaomin Li3, and Jun Xu1
Author Affiliations
  • 1Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800
  • 2Graduate School of the Chinese Academy of Science, Beijing 100039
  • 3Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050
  • 4Anhui University, Anhui 230039
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    Optical properties for ZnO thin films grown on (100) γ-LiAlO2 (LAO) substrate by pulsed laser deposition method were investigated. The c-axis oriented ZnO films were grown on (100) γ-LiAlO2 substrates at the substrate temperature of 550 Celsius degrees. The transmittance of the films was over 85%. Peaks attributed to excitons were shown in absorption spectra, which indicated that thin films had high crystallinity. Photoluminescence spectra with the maximum peak at 540 nm were observed at room temperature, which seemed to be ascribed to oxygen vacancy in the ZnO films caused by diffusion of Li from the substrates into the films during the deposition.

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    Jun Zou, Shengming Zhou, Xia Zhang, Fenglian Su, Xiaomin Li, Jun Xu, "Deposition of ZnO thin films on (100) γ-LiAlO2 substrate," Chin. Opt. Lett. 3, 08494 (2005)

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    Received: Dec. 21, 2004

    Accepted: --

    Published Online: Jun. 6, 2006

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