Experimental Study of Hot Curing of Si-wafers by Laser

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Chinese Journal of Lasers, Volume. 21, Issue 8, 688(1994)

[in Chinese], [in Chinese], [in Chinese], and [in Chinese]

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[in Chinese]

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In this paper laser gettering technique is introduced.Its principle is analysed and some experimental results are presented. This technique is now on trial in a transistor'S production line.

Keywords

P-N juction semiconductor device''s bsse thermal property laser gettering

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[in Chinese], [in Chinese], [in Chinese], [in Chinese]. Experimental Study of Hot Curing of Si-wafers by Laser[J]. Chinese Journal of Lasers, 1994, 21(8): 688

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Paper Information

Category: laser manufacturing

Received: Oct. 25, 1993

Accepted: --

Published Online: Aug. 17, 2007

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Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology