In recent years, Type-Ⅱ InAs/GaSb superlattice infrared detectors have experienced significant developments in material growth quality, device structural designs, and imaging applications. Especially for multi-color infrared detection, type-Ⅱ superlattice has several fundamental properties such as tunable band gap, low dark current, high quantum efficiency, high uniformity, and low cost, that makes it the preferred material for the third-generation infrared detection technology. In this paper, recent advances in antimonide multi-color detectors at the Center for Antimonide Narrow-Bandgap Semiconductors have been reported. Development of a variety of high-performance multi-color infrared detectors with low noise, high quantum efficiency and low optical crosstalk, such as short/mid, short/long, mid/long, long/long, and mid/long/very long multi-color infrared detectors were successfully realized.