INFRARED, Volume. 45, Issue 7, 1(2024)

Research Progress of Field Effect Transistor Terahertz Detector in Terahertz Imaging (I)

Chen-yang JIN1,2, Ya-ru KANG1,2, Zhen HUANG3, Yong-mei ZHAO1,4,5,6, Wei YAN1,6、*, Zhao-feng LI1,2,4,6, Xiao-dong WANG1,2,4,6, and Fu-hua YANG1,4,6
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
  • 4[in Chinese]
  • 5[in Chinese]
  • 6[in Chinese]
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    Terahertz (THz) waves have characteristics such as low energy, strong penetration, and high resolution. Therefore, THz imaging technology has broad prospects in areas such as security inspection, medical diagnosis, and non-destructive testing. As an important component of THz imaging systems, the performance of THz detectors has a significant impact on imaging resolution and speed. Field effect transistor (FET) THz detectors, due to their characteristics of room temperature operation, easy large-scale integration, and fast response speed, have enormous potential in imaging applications. This paper reviews the research progress of FET THz detectors in the field of THz imaging in recent years, including advances in imaging arrays, material selection, and analysis of existing design and manufacturing issues It points out that the antenna and pixel spacing are important factors limiting large-scale arraying. Based on this, it provides an outlook on future research directions, indicating that new materials and structural designs will further improve device performance,achieving faster and dearer THz imaging

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    JIN Chen-yang, KANG Ya-ru, HUANG Zhen, ZHAO Yong-mei, YAN Wei, LI Zhao-feng, WANG Xiao-dong, YANG Fu-hua. Research Progress of Field Effect Transistor Terahertz Detector in Terahertz Imaging (I)[J]. INFRARED, 2024, 45(7): 1

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    Paper Information

    Received: Jan. 12, 2024

    Accepted: --

    Published Online: Sep. 29, 2024

    The Author Email: Wei YAN (yanwei@semi.ac.cn)

    DOI:10.3969/j.issn.1672-8785.2024.07.001

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