Chinese Journal of Lasers, Volume. 33, Issue suppl, 435(2006)

Design of 980 nm High-Power Semiconductor Laser Therapeutic Equipment

[in Chinese]1,2, [in Chinese]3, and [in Chinese]1、*
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
  • show less

    A kind of which includes high-power semiconductor laser therapeutic equipment is designed beam path, current source and protective circuit and constant temperature control unit. By comparing and analyzing the effects of GaAlAs, InGaAs and Nd:YAG lasers in medicine, InGaAs high-power semiconductor laser therapeutic equipment with output wavelength at 980 nm is used as effective light source, 670 nm semiconductor laser as aiming beam. This equipment has the highest power of 3 W, with such virtues as high output power, small volume and long life span, and has a very good prospect of application to tumor, ear-nose-throat department and gynecology.

    Tools

    Get Citation

    Copy Citation Text

    [in Chinese], [in Chinese], [in Chinese]. Design of 980 nm High-Power Semiconductor Laser Therapeutic Equipment[J]. Chinese Journal of Lasers, 2006, 33(suppl): 435

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category: laser manufacturing

    Received: --

    Accepted: --

    Published Online: Apr. 21, 2006

    The Author Email: (nanmu1979@sina.com)

    DOI:

    Topics