Using solid state molecular beam epitaxy technology we have grown the high quality InGaAs/GaAs strained quantum well materials and fabricated quantum well lasers. The threshold current and differential quantum efficiency of the ridge wavegiude quantum well lasers with coated films are 15 mA and 0. 8 W/A, respectively. The linear output power is more than 150 mW, and 100 mW and larger fundamental mode output power is achieved. Through the coupling with an Er-doped fiber, the output power of 40～60 mW has been demonstrated, and the emitting wavelength is near 977 nm.