The morpha and spectral character of damaged CCD, which has been irradiated by picosecond pulsed laser, are studied by using scanning electron microscope and micro-Raman spectrometer. Morphological damaged images of different layers are observed on the surface of CCD. The damage sequence is decided by comparing different layers′ conditions with a scale as small as a single pixel. The damage status of W-shield and poly-Si around one pixel is observed. On the cross section, the red-shift of Raman spectrum of bulk silicon material is measured and it means that bulk silicon melts, which brings a short-circuit between surface poly-Si electrode and substrate. The short-circuit explains the thermal mechanism of complete failure.